Gain for the new IU shapers
All gains are given for a 8 bit DAC set at 20/256.
Silicon: shaping time of 1 µs
Type Dyn. Range (MeV) PA gain (mV/MeV) Max. Amplitude into shaper (mV) Gain
T1 220 2000 2 4000 ÷3
T1 1mm 7000 0.8 5600 ÷3
T2 800 5 4000 ÷3
T3 600 5 3000 ÷3
Lassa 65 120 15 1800 ÷1
Lassa 500 500 5 2500 ÷3
ISiS 300 15 4500 ÷3
CsI: shaping time of 3 µs
Type Max.Energy deposited (MeV) PA gain (mV/MeV) Max. Amplitude into shaper (mV) Gain
T1 33.33333333 45 1500 ÷1
T2 66.66666667 45 3000 ÷3
T3 33.33333333 45 1500 ÷1
Lassa 20 45 900 ÷1
ISiS 10 45 450 ÷1
The gains for the CsI are based on pusler + data from the TAMU expt.